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| MMBT5550 / MMBT5551 MMBT5550 / MMBT5551 NPN Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren fur die Oberflachenmontage Power dissipation - Verlustleistung 2.9 0.1 0.4 3 1.30.1 1.1 NPN 250 mW SOT-23 (TO-236) 0.01 g Version 2006-05-09 Plastic case Kunststoffgehause Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Type Code 1 1.9 2 Dimensions - Mae [mm] 1=B 2=E 3=C Maximum ratings (TA = 25C) Collector-Emitter-volt. - Kollektor-Emitter-Spannung Collector-Base-voltage - Kollektor-Basis-Spannung Emitter-Base-voltage - Emitter-Basis-Spannung Power dissipation - Verlustleistung Collector current - Kollektorstrom (dc) Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur B open E open C open VCEO VCBO VEBO Ptot IC Tj TS 2.5 max Grenzwerte (TA = 25C) MMBT5550 140 V 160 V 6V 250 mW 1) 600 mA -55...+150C -55...+150C MMBT5551 160 V 180 V Characteristics (Tj = 25C) Min. DC current gain - Kollektor-Basis-Stromverhaltnis ) 2 Kennwerte (Tj = 25C) Typ. - - - - - - - - - - Max. - - 250 250 - - 0.15 V 0.15 V 0.25 V 0.20 V IC = 1 mA, VCE = 5 V IC = 10 mA, VCE = 5 V IC = 50 mA, VCE = 5 V MMBT5550 MMBT5551 MMBT5550 MMBT5551 MMBT5550 MMBT5551 MMBT5550 MMBT5551 MMBT5550 MMBT5551 hFE hFE hFE hFE hFE hFE VCEsat VCEsat VCEsat VCEsat 60 80 60 80 20 30 - - - - Collector-Emitter saturation voltage - Kollektor-Emitter-Sattigungsspg. 2) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA 1 2 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% http://www.diotec.com/ (c) Diotec Semiconductor AG 1 MMBT5550 / MMBT5551 Characteristics (Tj = 25C) Min. Base-Emitter saturation voltage - Basis-Emitter-Sattigungsspannung 2) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA MMBT5550 MMBT5551 MMBT5550 MMBT5551 MMBT5550 MMBT5551 MMBT5550 MMBT5551 VBEsat VBEsat VBEsat VBEsat ICBO ICBO ICBO ICBO IEBO fT CCBO CEBO MMBT5550 MMBT5551 F F RthA - - - - - - - - - 100 MHz - - - - - - - - - - - - - - - - - - < 420 K/W 1) MMBT5400 / MMBT5401 MMBT5550 = 1F MMBT5551 = 3S 1.0 V 1.0 V 1.2 V 1.0 V 100 nA 50 nA 100 A 50 A 50 nA 300 MHz 6 pF 30 pf 10 dB 8 dB Kennwerte (Tj = 25C) Typ. Max. Collector-Base cutoff current - Kollektor-Basis-Reststrom VCB = 100 V, (E open) VCB = 120 V, (E open) VCB = 100 V, Tj = 100C, (E open) VCB = 120 V, Tj = 100C, (E open) VEB = 4 V, (C open) Gain-Bandwidth Product - Transitfrequenz IC = 10 mA, VCE = 10 V, f = 100 MHz Collector-Base Capacitance - Kollektor-Basis-Kapazitat VCB = 10 V, IE = ie = 0, f = 1 MHz Emitter-Base Capacitance - Emitter-Basis-Kapazitat VEB = 0.5 V, IC = ic = 0, f = 1 MHz Noise figure - Rauschzahl VCE = 5 V, IC = 200 A, RG = 2 k, f = 30 Hz ... 15 kHz Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren Marking - Stempelung Emitter-Base cutoff current - Emitter-Basis-Reststrom 2 1 Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss http://www.diotec.com/ (c) Diotec Semiconductor AG 2 |
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